Open AccessA STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN ＳｉＯ２ THIN FILMS
Author(s) -
Yue Lan-Ping,
Yizhen He
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.1756
Subject(s) - raman scattering , raman spectroscopy , materials science , annealing (glass) , x ray raman scattering , nanocrystal , phonon , thin film , sputtering , scattering , analytical chemistry (journal) , condensed matter physics , optics , nanotechnology , composite material , chemistry , physics , chromatography
Raman scattering of Ge nanocrystallites from 4 to 16nm is size, embedded in thin films has been studied. The Ge- samples were prepared by ion-beam sputtering and a post-annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge particles are in good agreement with the calculated results based on the phonon confinement theory. Effects of the surface and interface of the Ge-nanocrystallites on Raman spectra have also been investigated.