A STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN ＳｉＯ２ THIN FILMS | Zendy

YUE LAN-PING | Zendy; Yizhen He | Zendy

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A STUDY OF THE RAMAN SCATTERING OF Ge NANOCRYSTALLITES EMBEDDED IN ＳｉＯ２ THIN FILMS

Author(s) -

YUE LAN-PING,

Yizhen He

Publication year - 1996

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.45.1756

Subject(s) - raman scattering , raman spectroscopy , materials science , annealing (glass) , x ray raman scattering , nanocrystal , phonon , thin film , sputtering , scattering , analytical chemistry (journal) , condensed matter physics , optics , nanotechnology , composite material , chemistry , physics , chromatography

Raman scattering of Ge nanocrystallites from 4 to 16nm is size, embedded in thin films has been studied. The Ge- samples were prepared by ion-beam sputtering and a post-annealing technique. A red shift and broadening of the Raman peak observed with decreasing the size of Ge particles are in good agreement with the calculated results based on the phonon confinement theory. Effects of the surface and interface of the Ge-nanocrystallites on Raman spectra have also been investigated.

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