Open AccessPHOTOVALTAIC EFFECT IN MPS STRUCTURE
Author(s) -
Yan Wang,
Yun Feng,
Xin Liao,
Guanglin Kong
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.1615
Subject(s) - materials science , porous silicon , schottky diode , optoelectronics , silicon , diode , open circuit voltage , substrate (aquarium) , heterojunction , schottky barrier , photovoltaic system , layer (electronics) , atmospheric temperature range , range (aeronautics) , voltage , nanotechnology , composite material , electrical engineering , oceanography , physics , geology , meteorology , engineering
In this paper, we report the recent results about photovoltaic effects in a metal (Al or Au)/porous silicon(MPS)structure. We have given the spectral response curves of the Schottky diode structures of the first time, and investigated the dependences of the open circuit voltage on the incident light intensity and the measurement temperature. The results obtained show that the Schottky junction between the metal and the porous silicon layer should be the principal source of the photovoltaic actions, while the heterojunction between the porous silicon layer and the silicon substrate could impede the transport of the forward current in this structures. It is also found that the open circuit voltage increases linearly with decreasing of temperature in the range of 300—120K and the temperature coefficient is 2.0mV/K and 2.8mV/K for Au/PS and Al/PS diodes, respectively.