Open AccessTHE ETCH PITS OF DISLOCATIONS AND SYMMETRY GROUP IN Bi12GeO20 CRYSTAL
Author(s) -
Xingkui Zhang,
Xian-jie Liu,
Xu Xiu-Ying,
Lyu Peng
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.1366
Subject(s) - crystal (programming language) , materials science , etch pit density , symmetry (geometry) , group (periodic table) , etching (microfabrication) , crystallography , condensed matter physics , plane (geometry) , dislocation , geometry , physics , chemistry , composite material , quantum mechanics , mathematics , layer (electronics) , computer science , programming language
The etch pits of dislocations in Bi12GeO20 crystal at (100), (110) and (111) planes have been studied by means of chemical etching. The pattern of etch pits are very special compared with the common cubic system crystal, and we have analyzed it with theory of symmetry group. The patterns of etch pits by theoretical analysis are in conformity with the experiment. It shows that the pettern of etch pits of dislocations consists of {112} planes. It is clear that the habitual plane of crystal of Bi12GeO20 crystal is {112} plane.