Open AccessTHE VALENCE BAND STRUCTURES AND OPTICAL PROPERTIES OF STRAINED GaAs LAYERS GROWN ON THE GexSi1-x(001) SUBSTRATES
Author(s) -
徐至中
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.126
Subject(s) - valence band , materials science , valence (chemistry) , condensed matter physics , effective mass (spring–mass system) , nonlinear optical , electronic band structure , band gap , optoelectronics , semimetal , nonlinear system , chemistry , physics , organic chemistry , quantum mechanics
The valence band structures and third order nonlinear optical susceptibility of strained GaAs layers grown on the GexSi1-x(001) substrates were calculated in tight-binding frame.The results show that the strain makes the effective mass of holes as well as the dentity of state for the valence band decrease and makes the nonlinear optical susceptibility with polarity in (001) plane (3) grow.