Open AccessSURFACE PASSIVATION OF LIGHT-EMITTING POROUS SILICON BY NITRIDE
Author(s) -
Li Gu-Bo,
Fulong Zhang,
Huajie Chen,
Honglei Fan,
Miao Yu,
Hou Xiao-Yua
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.1232
Subject(s) - dangling bond , passivation , porous silicon , materials science , photoluminescence , silicon nitride , annealing (glass) , porosity , silicon , nitride , optoelectronics , fourier transform infrared spectroscopy , analytical chemistry (journal) , chemical engineering , nanotechnology , composite material , layer (electronics) , chemistry , organic chemistry , engineering
Porous silicon is treated in NH3 gas by rapid thermal annealing. FTIR spectra indicate that the surface of the sample is covered with Si(NH)2 and Si3N4 species. ESR signal shows that the sample has rather low density of dangling bonds. The photoluminescence intensity of the treated sample de-creases slightly compared to the sample without the treatment and is very stable while storing in at-mosphere. These results show that nitride can be an excellent passivation film on porous silicon and may be important to the practical applications.