Open AccessAN XPS STUDY OF Mn THIN FILMS GROWN ON GaAs(001l) SURFACE
Author(s) -
徐敏,
朱兴国,
张明,
董国胜,
金晓峰
Publication year - 1996
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.45.1178
Subject(s) - x ray photoelectron spectroscopy , substrate (aquarium) , materials science , layer (electronics) , thin film , buffer (optical fiber) , analytical chemistry (journal) , chemical engineering , nanotechnology , chemistry , telecommunications , oceanography , chromatography , geology , computer science , engineering
The composition depth profiles of the Mn thin films grown on GaAs(00l) surface using MBE technique are studied with X-ray photoelectron spectroscopy(XPS) . The experimental results show that the fcc-Mn/GaAs(001) system grown on a 400 K substrate has a sandwich structure with a Mn-Ga-As buffer layer located between the fcc-Mn layer and the GaAs substrate; the α-Mn/GaAs (001) system grown on a 300 K substrate also has a similar buffer layer which is much thinner than that of the fcc-Mn/GaAs(001) system;and the system grown on a 450 K substrate is a Mn-Ga-As alloy beyond the GaAs substrate and it has no Mn-dominated area. It is concluded that to keep the substrate at a proper temperature(400 K) during growth to obtain a suitable thickness of buffer layer is an essential requirement to grow fcc-Mn on GaAs(00l) surface.