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ELECTRONIC STRUCTURES AND OPTICAL PROPERTIES OF SUPERLATTICES (Si_2)_4/(GaAs)_4 GROWN ON Si(00l)
Author(s) -
Zhi-Zhong Xu
Publication year - 1995
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.44.1984
Subject(s) - pseudopotential , superlattice , materials science , band offset , electronic band structure , electronic structure , electronic band , computation , optoelectronics , offset (computer science) , oscillator strength , condensed matter physics , band gap , valence band , physics , quantum mechanics , computer science , algorithm , programming language , spectral line
With using the atomic geometrical structures and band-offset extracted from the results of computations by Peressi et al with first principle pseudopotential method, the electronic band structures and the optical oscillator strengths for the superlatti-ce

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