HOT ELECTRON THERMOELECTRIC POWER UNDER A MICROWAVE FIELD | Zendy

Mei Liu | Zendy; LIU WEI | Zendy; Shu Cao | Zendy; XING DIN-YU | Zendy

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HOT ELECTRON THERMOELECTRIC POWER UNDER A MICROWAVE FIELD

Author(s) -

Mei Liu,

LIU WEI,

Shu Cao,

XING DIN-YU

Publication year - 1995

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.44.1977

Subject(s) - microwave , seebeck coefficient , non equilibrium thermodynamics , hot electron , thermoelectric effect , semiconductor , field (mathematics) , temperature gradient , electron , electron temperature , materials science , condensed matter physics , microwave power , power (physics) , computational physics , physics , thermodynamics , optoelectronics , quantum mechanics , mathematics , pure mathematics

Gradient of temperature and chemical potential can be produced in a semiconductor sample by applying a localized microwave field. The nonequilibrium statistical opertor method is generalized and applied to study the transport coefficients of a hot-electro

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