Open AccessGROWTH OF METASTABLE fcc Mn THIN FILM ON GaAs(00l) AND ITS ELECTRONIC STRUCTURE STUDIED BY PHOTOEMISSION WITH SYNCHROTRON RADIATION
Author(s) -
Yan Chen,
Dong Guo-Shen,
Ming Zhang,
Min Xu,
Jin Xiao-Feng,
Lu E,
Haibing Pan,
Ping Xu,
Xinyi Zhang,
Fan Chao-Yang
Publication year - 1995
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.44.1861
Subject(s) - materials science , metastability , thin film , synchrotron radiation , fermi level , substrate (aquarium) , epitaxy , electronic structure , condensed matter physics , phase (matter) , electron , analytical chemistry (journal) , nanotechnology , optics , chemistry , physics , layer (electronics) , organic chemistry , oceanography , quantum mechanics , chromatography , geology
The epitaxial growth of metastable fcc Mn thin films on GaAs(001) surface has been achieved at a substrate temperature of 400K. The development of the fcc Mn thin films as a function of coverage is studied by photoemission with synchrotron radiation. The electron density of states below the Fermi edge of the fcc Mn phase is measured A significant difference of the electronic structures is observed between the metastable fcc Mn phase and the thermodynamically stable α-Mn phase. Possible mechanisms are proposed to interprete the experimental result.