
MEASUREMENT OF THE MASS ATTENUATION COEFFICIENTS FOR SiH4 ANDSi
Author(s) -
Wang Da-Cun,
Luo Ping-An,
Hua Ye,
Zhidong Wang
Publication year - 1995
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.44.1853
Subject(s) - attenuation , photoelectric effect , compton scattering , range (aeronautics) , cross section (physics) , scattering , atomic physics , physics , attenuation coefficient , radiation , materials science , optics , analytical chemistry (journal) , chemistry , chromatography , quantum mechanics , composite material
With X-rays produced by protons exciting elemental and compound targets the mass attenuation coefficients have been systematicaJly measured for SiH4 in the range of X-ray energy 1.486-15.165keV, for Si in 8.041-29.109keV. Not only the validity of Bragg's additivity law in the gaseous compound was verifed by experiment, but also the mass attenuation coefficients of Si in the energy range 1.4-6 keV were obtained. The photoelectric cross sections have been obtained by subtracting thermal diffuse scattering and Compton scattering cross section from the measured total cross sections and compared with the theoretical results.