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MBE和MOCVD生长的AIGaAs/GaAs GRIN—SCH SQW激光器深中心的比较
Author(s) -
LU LI-WU,
Jie Zhou,
Songlin Feng,
XU JUN-YING,
Yang Hui
Publication year - 1995
Publication title -
acta physica sinica
Language(s) - Uncategorized
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.44.1249
Subject(s) - metalorganic vapour phase epitaxy , quantum well , optoelectronics , materials science , gallium arsenide , optics , physics , nanotechnology , laser , epitaxy , layer (electronics)

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