Open AccessPHOTOLUMINESCENCE FROM NANO-CRYSTALLITES OF SILICON FILMS PREPARED BY PECVD
Author(s) -
Liu Xiangna,
Xiaowei Wu,
Xiaoguang Bao,
Yi He
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.985
Subject(s) - photoluminescence , crystallite , materials science , plasma enhanced chemical vapor deposition , silane , polycrystalline silicon , silicon , nanocrystalline silicon , nano , band gap , optoelectronics , chemical engineering , nanotechnology , crystalline silicon , composite material , amorphous silicon , layer (electronics) , metallurgy , engineering , thin film transistor
We report in this paper the observation of visible photoluminescence (PL) at room temperature from nano-crystallites of silicon films, which are prepared in a PE CVD system by using strong hydrogen diluted silane as the reactant gas source, without any post-processings. We attribute the PL to the photons above the band gap of bulk crystal silicon created by the carriers in the nano-crystallites under the function of quantm size effect. The effective deposition parameters are concerned.