Open AccessNUCLEATION MECHANISM OF THE SOLID PHASE CRY STALLIZATION OF a-Si:H FILMS CONTROLLED BY LIGHTLY DOPING IN LOW-TEMPE-RATURE ANNEALING
Author(s) -
Du Kai-Ying,
Haibo Rao
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.966
Subject(s) - materials science , annealing (glass) , nucleation , doping , crystallization , grain size , tempe , attenuation coefficient , analytical chemistry (journal) , optics , optoelectronics , composite material , thermodynamics , chemistry , physics , food science , chromatography
By lightly doping in a-Si: H films in the process of low-temperature annealing, the density of the nualeation centers was controlled, and the films of larger grain polysilicon with good quality were obtained. The results show that the crystallization was almost uniformly proceed in( and direction (slightly faster in direction), the average grain size is about 1μm, the mobility is about 92 cm/V·s, and the dark conductivity at room-temperature is between 10-s/cm and 10-4s/cm. The optical gaps of the crystallized films were determined between 1.16-1.22eV from the absorption spectrum. The coefficient of optical absorption within the wave length range of 800-1000nm is on the order of 104cm-1, and the absorption efficiency is around 60%.The results of heavily doped annealing samples of a-Si:H, as a contrast, are also discussed.