Open AccessELECTRICAL PROPERTIES OF WSix/Si(111)FILMS BY MULTILAYER SPUTTERING
Author(s) -
Xiaoping Wang,
Tiansheng Zhao,
Hongtu Liu,
Shi Yi-Sheng,
Huihui Weng,
Guo Xue-Zhe
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.823
Subject(s) - materials science , sheet resistance , silicide , annealing (glass) , tungsten , crystallization , sputtering , tetragonal crystal system , thin film , silicon , electrical resistance and conductance , diffraction , substrate (aquarium) , sputter deposition , composite material , optoelectronics , nanotechnology , metallurgy , optics , crystal structure , crystallography , chemical engineering , layer (electronics) , chemistry , physics , oceanography , geology , engineering
Tungsten silicide films have been sputtered onto silicon substrate and annealed at temperature ranging from 400 to 1000℃ in vacuum. The structure and defect of each film is detected by X-ray diffraction (XRD) and positron annihilation technology (PAT), respectively. The sheet resistance has been measured and the result in-dicates that the sheet resistance of films decrease steeply as a result of annealing in the range of 600-700℃. This phenomenon corresponds to the crystallization of W53 tetragonal phase in films which has been certified by XRD. Electrical properties of films are sensitive to structure and defects in films and electrical measurement can be used as a good probe for the study on the characteristics of films.