Open AccessTHE ELECTRONIC STRUCTURE OF MoSi2(001)SURFACE
Author(s) -
Haifeng Zhang,
Xintang Huang,
Yongping Li
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.803
Subject(s) - materials science , electronic structure , surface states , density of states , fermi level , monolayer , condensed matter physics , surface (topology) , crystal (programming language) , local density of states , surface layer , layer (electronics) , nanotechnology , physics , electron , quantum mechanics , geometry , mathematics , computer science , programming language
The electronic stucture of three kinds of MoSi2(001)surface with C11b crystal structure were studied by using LMTO一ASA method, their surface total electronic densities of states and local densities of states of surface layer as well as partial densities of states, were provided and compared with the correlated atomic bulk densities of states. As to the stability of the surfaces, the densities of states on Fermi level's were discussed, the Si monolayer surface is the most stable one among them, which support the experimental results obtained by Kemoda et al.