Open AccessTHE DEEP LEVEL STUDIES OF n-Si/n+-Si INTERFACE IN SILICON DIRECT BONDING
Author(s) -
Lu Liu,
Jie Zhou,
Shouhua Feng,
Qian Zhao-Ming,
Qing Peng
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.785
Subject(s) - deep level transient spectroscopy , silicon , materials science , interface (matter) , range (aeronautics) , penning trap , analytical chemistry (journal) , electron , atomic physics , optoelectronics , chemistry , physics , composite material , capillary number , capillary action , chromatography , quantum mechanics
The deep levels of n-Si/n+一Si interface and near the interface in the n-Si have been studies using spread resistance probe (SRP) and deep level transient spectroscopy (DLTS) techniques in silicon direct bonding. The experimental results show that a dominant electron trap, having energy level position of E0.39eV and concentration in the range of l01314-3, was observed. This trap is strongly related to vacancies of n-Si/n+-Si interface and near the interface in the n-Si induced by high temperature(1000一11000C) treatment in SDB processing.