Open AccessCHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES
Author(s) -
Ming Li,
Mai Zhang,
Cui Shu-Pan
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.78
Subject(s) - diffraction , silicon , materials science , intensity (physics) , resolution (logic) , characterization (materials science) , debye , optics , molecular physics , condensed matter physics , physics , nanotechnology , optoelectronics , computer science , artificial intelligence
Based on the statistical theory of X-ray dynamical diffraction, a method to obtain the static Debye-Waller facter from section topographs is described. By analyzing the intensity distribution of the Pendelldsung fringes in the X-ray diffraction topograghs for heat treated CZ and MCZ silicon single crystals, the number density and the size of the oxygen precipitates which are smaller than X-ray topographic resolution are estimated. This quantitative analysis method provides a new means of studying the micro-defects.