CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES | Zendy

LI MING | Zendy; MAI ZHEN-HONG | Zendy; CUI SHU-PAN | Zendy

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CHARACTERIZATION OF MICRO-DEFECTS IN SILICON SINGLE CRYSTALS BY ANALYZING THE PENDELL?SUNG FRINGES

Author(s) -

LI MING,

MAI ZHEN-HONG,

CUI SHU-PAN

Publication year - 1994

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.43.78

Subject(s) - diffraction , silicon , materials science , intensity (physics) , resolution (logic) , characterization (materials science) , debye , optics , molecular physics , condensed matter physics , physics , nanotechnology , optoelectronics , computer science , artificial intelligence

Based on the statistical theory of X-ray dynamical diffraction, a method to obtain the static Debye-Waller facter from section topographs is described. By analyzing the intensity distribution of the Pendelldsung fringes in the X-ray diffraction topograghs for heat treated CZ and MCZ silicon single crystals, the number density and the size of the oxygen precipitates which are smaller than X-ray topographic resolution are estimated. This quantitative analysis method provides a new means of studying the micro-defects.

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