Open AccessPHOTOLUMINESCENCE OF POROUS SILICON PROCESSED IN H2O2 UNDER ILLUMINATION
Author(s) -
Jun Lin,
Lizhu Zhang,
Borui Zhang,
Zong Bo-Qing,
G. G. Qin,
Zhenhua Xu
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.646
Subject(s) - porous silicon , photoluminescence , materials science , fourier transform infrared spectroscopy , silicon , luminescence , porosity , infrared , intensity (physics) , fourier transform , optoelectronics , optics , composite material , physics , quantum mechanics
The photoluminescence (PL) intensity of porous silicon in H2O2 under illtimina-tion increases first, and then decreases with increasing processing time, and the PL intensity reaches its maximum when the processing time is one minute. Under illumination in air, the PL degradation of porous silicon without processing is substa-ntia1, but that for the processed porous silicon gets much smaller. The Fourier-transform infrared (FTIR) absorption shows that the localized vibration related to oxygen increases greatly but all kinds of Si-H bonds decrease obviously. Contrasting the variation of the FTIR with that of the PL in the processes, we conclude that the luminescence does not come from the Si-H bonds on the surfaces of porous silicon.