Open AccessA STUDY ON LASER-PREPARATION AND ENERGY- LEVEL STRUCTURE OF NANOMETER SIZED a-Si3N4 PARTICLES
Author(s) -
Shanzhong Wang,
LI Dao-huo
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.627
Subject(s) - nanometre , materials science , dangling bond , particle (ecology) , silicon , laser , photoluminescence , nanotechnology , chemical vapor deposition , deposition (geology) , chemical physics , optoelectronics , optics , physics , composite material , paleontology , oceanography , sediment , biology , geology
In this paper, we give the principle and the empirical formulas of the preparation for nanometer sized a-Si3N4 particles by laser induced chemical vapor deposition (LICVD). Under certain technological parameters, our experiments have obtained high quality nanometer a-Si3N4 particles whose average diameter is 6.5nm. We disperse these particles in organic solvent so as to study its energy level structure with ultravolet-visible spectrum. The photoluminescent experiments show its peak-like spectrum structure and the splitting of energy band, which relate to super micro-particles. We also describe the picture of the physical structure of nanometer a-Si3N4 particles and demonstrate that silicon"wrong bond"≡Si-Si≡and silicon dangling bond≡Si30 play a dominant role in the spectrum character for Si-riched nanometer a-Si3N4 particle.