Open AccessSTUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION
Author(s) -
Wei Ya-Yi,
Shen Jin-Xi,
Guoqiang Zheng,
Guo Shao-Ling,
Dewei Tang,
Peng Zheng-Fu,
Zhang Yun-Qiang
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.282
Subject(s) - magnetoresistance , heterojunction , materials science , doping , electron , fermi gas , condensed matter physics , x ray absorption spectroscopy , magnetic field , hall effect , electron mobility , optoelectronics , physics , optics , absorption spectroscopy , quantum mechanics
A new type of AlxGa1-xAs/GaAs beterojunction based on Si δ-doping has been fabricated by MBE method. We measured the magnetoresistances, mobility and Hall resistance of the 2-D electron gas at the junction in a transvers magnetic field from 0.3 to 30K. Using Fourier-transform analysis, the distribution of electrons and their effective masses for each subband are determined. whichare 0*01*0. With the decreasing of temperaturethe electrons in each subband increase continuously. We observed abnormal peaks in magnetoresistance wben magnetic field was scanned from 0 to 7T at 0.3K.