STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION | Zendy

WEI YA-YI | Zendy; SHEN JIN-XI | Zendy; ZHENG GUO-ZHEN | Zendy; Guo Shao-Ling | Zendy; Tang Dingyuan | Zendy; PENG ZHENG-FU | Zendy; ZHANG YUN-QIANG | Zendy

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STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION

Author(s) -

WEI YA-YI,

SHEN JIN-XI,

ZHENG GUO-ZHEN,

Guo Shao-Ling,

Tang Dingyuan,

PENG ZHENG-FU,

ZHANG YUN-QIANG

Publication year - 1994

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.43.282

Subject(s) - magnetoresistance , heterojunction , materials science , doping , electron , fermi gas , condensed matter physics , x ray absorption spectroscopy , magnetic field , hall effect , electron mobility , optoelectronics , physics , optics , absorption spectroscopy , quantum mechanics

A new type of AlxGa1-xAs/GaAs beterojunction based on Si δ-doping has been fabricated by MBE method. We measured the magnetoresistances, mobility and Hall resistance of the 2-D electron gas at the junction in a transvers magnetic field from 0.3 to 30K. Using Fourier-transform analysis, the distribution of electrons and their effective masses for each subband are determined. whichare 0*01*0. With the decreasing of temperaturethe electrons in each subband increase continuously. We observed abnormal peaks in magnetoresistance wben magnetic field was scanned from 0 to 7T at 0.3K.

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