PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE | Zendy

Guanghua Chen | Zendy; Yongping Guo | Zendy; Yao Jiang-Hong | Zendy; Zhizhong Song | Zendy; Fangqing Zhang | Zendy

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PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE

Author(s) -

Guanghua Chen,

Yongping Guo,

Yao Jiang-Hong,

Zhizhong Song,

Fangqing Zhang

Publication year - 1994

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.43.1847

Subject(s) - superlattice , materials science , photocurrent , thermal stability , diffraction , hydrogen , band gap , plasma , condensed matter physics , analytical chemistry (journal) , optoelectronics , optics , chemical engineering , chemistry , physics , chromatography , quantum mechanics , engineering , organic chemistry

The a-Si: H/a-SiCx: H superlattices were fabricated by r. f. plasma CVD. The blue shift of optical bandgap and construction of the superlattices were present. The interface abruptness was determined by low-angle X-ray diffraction. The constant photocurrent method and IR measurement showed that there existed excess hydrogen and high concentration of Si-C bonds at a-Si:H/a-SiCx:H interfaces. The thermal stability of interfacial hydrogen was poor. The interfacial defect density was about ×-2.

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