Open AccessPROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE
Author(s) -
Guanghua Chen,
Yuzheng Guo,
Yao Jiang-Hong,
Song Zhi-Zhong,
Fangqing Zhang
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.1847
Subject(s) - superlattice , materials science , photocurrent , thermal stability , diffraction , hydrogen , band gap , plasma , condensed matter physics , analytical chemistry (journal) , optoelectronics , optics , chemical engineering , chemistry , physics , chromatography , quantum mechanics , engineering , organic chemistry
The a-Si: H/a-SiCx: H superlattices were fabricated by r. f. plasma CVD. The blue shift of optical bandgap and construction of the superlattices were present. The interface abruptness was determined by low-angle X-ray diffraction. The constant photocurrent method and IR measurement showed that there existed excess hydrogen and high concentration of Si-C bonds at a-Si:H/a-SiCx:H interfaces. The thermal stability of interfacial hydrogen was poor. The interfacial defect density was about ×-2.