STUDY OF EFFECTS OF LOW-ENERGY BOMBARDMENTS OF Si(001)-2×1 BY MOLECULAR DYNAMICS SIMULATION
Author(s) -
Jia Zheng-Ming,
Yang Genqing,
CHENG ZHAO-NIAN,
Xianghuai Liu,
Zou Shichang
Publication year - 1994
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.1809
Subject(s) - molecular dynamics , surface (topology) , atom (system on chip) , amorphous solid , materials science , dynamics (music) , atomic physics , chemical physics , physics , chemistry , crystallography , quantum mechanics , geometry , mathematics , computer science , acoustics , embedded system
Molecular dynamics simulations were performed for 1-100eV particle bombardments of Si(001)-2×1 surface. The two dimensional pair correlation functions were obtained to investigate the arrangement of surface atoms after such bombardments. The results show that 10eV and 100eV bombardments had the some effects on the behaviour of surface atoms. On one hand, 10eV and 100eV bombardments improved the mobility of surface atoms and produced more dimers. On the other hand, they increased the disordering of surface atom's arrangement and made the surface tend to be amorphous.
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