THE PHOTOLUMINESCENCE SPECTRA SHIFT OF POROUS SILICON BY SPONTANEOUS OXIDATION | Zendy

Xiaowei Wu | Zendy; XiMao Bao | Zendy; Xiangqin Zheng | Zendy; Feng Yan | Zendy

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THE PHOTOLUMINESCENCE SPECTRA SHIFT OF POROUS SILICON BY SPONTANEOUS OXIDATION

Author(s) -

Xiaowei Wu,

XiMao Bao,

Xiangqin Zheng,

Feng Yan

Publication year - 1994

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.43.1203

Subject(s) - photoluminescence , porous silicon , materials science , spontaneous emission , silicon , spectral line , excited state , recombination , surface states , oxidation process , porosity , photochemistry , optoelectronics , surface (topology) , atomic physics , chemical engineering , optics , chemistry , composite material , physics , laser , biochemistry , geometry , mathematics , astronomy , gene , engineering

The light-emission of the porous silicon is an indirect recombination process of the excited electron through the surface states. During spontaneous oxidation new surface states are formed which make the photoluminescence spectra shift.

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