Open AccessTHE PHOTOLUMINESCENCE SPECTRA SHIFT OF POROUS SILICON BY SPONTANEOUS OXIDATION
Author(s) -
Xiaowei Wu,
Xiaoguang Bao,
Zheng Xiangqin,
Y. Feng
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.1203
Subject(s) - photoluminescence , porous silicon , materials science , spontaneous emission , silicon , spectral line , excited state , recombination , surface states , oxidation process , porosity , photochemistry , optoelectronics , surface (topology) , atomic physics , chemical engineering , optics , chemistry , composite material , physics , laser , biochemistry , geometry , mathematics , astronomy , gene , engineering
The light-emission of the porous silicon is an indirect recombination process of the excited electron through the surface states. During spontaneous oxidation new surface states are formed which make the photoluminescence spectra shift.