MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE | Zendy

Mao Hui-bing | Zendy; Wei Lü | Zendy; MA ZHAO-HUI | Zendy; Xingquan Liu | Zendy; SHEN XUE-CHU | Zendy

AI Assistant Blog Pricing

Home ZAIA Blog

Open Access

MONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE

Author(s) -

Mao Hui-bing,

Wei Lü,

MA ZHAO-HUI,

Xingquan Liu,

SHEN XUE-CHU

Publication year - 1994

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.43.1118

Subject(s) - vicinal , nucleation , monte carlo method , materials science , saturation (graph theory) , condensed matter physics , surface (topology) , mode (computer interface) , physics , thermodynamics , quantum mechanics , mathematics , computer science , geometry , statistics , combinatorics , operating system

In this paper the MBE nucleation mode on vicinal GaAs(001)surface is simu-lated by Monte Carlo method. The results show that on A-surface the 2-dimension nucleation mode is dominant at 800-1000K. On B-surface the 2-dimension nucleation mode is dominant at low temperatures, but at high temperatures the step flow mode is dominant. And at both high and low temperature, there is a saturation phenomenon.

The content you want is available to Zendy users.

Already have an account? Click here to sign in.

Having issues? You can contact us here

Accelerating Research