Open AccessMONTE CARLO SIMULATION OF MBE GROWTH ON GaAs VICINAL SURFACE
Author(s) -
Huibing Mao,
Lu Wei,
Ma Zhao-Hui,
Xingquan Liu,
Shen XueChu
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.1118
Subject(s) - vicinal , nucleation , monte carlo method , materials science , saturation (graph theory) , condensed matter physics , surface (topology) , mode (computer interface) , physics , thermodynamics , quantum mechanics , mathematics , computer science , geometry , statistics , combinatorics , operating system
In this paper the MBE nucleation mode on vicinal GaAs(001)surface is simu-lated by Monte Carlo method. The results show that on A-surface the 2-dimension nucleation mode is dominant at 800-1000K. On B-surface the 2-dimension nucleation mode is dominant at low temperatures, but at high temperatures the step flow mode is dominant. And at both high and low temperature, there is a saturation phenomenon.