THEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICES | Zendy

San-huang Ke | Zendy; WANG REN-ZHI | Zendy; HUANG MEI-CHUN | Zendy

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THEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICES

Author(s) -

San-huang Ke,

WANG REN-ZHI,

HUANG MEI-CHUN

Publication year - 1994

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.43.103

Subject(s) - superlattice , materials science , valence (chemistry) , valence band , band gap , semiconductor , ab initio , electronic band structure , condensed matter physics , ab initio quantum chemistry methods , electronic structure , semimetal , molecular physics , molecule , physics , optoelectronics , quantum mechanics

Ab initio calculations of electronic structure for strained superlattices (SLS) and nn are carried out, the valence-band maximum Ev and the average bond energy Em in each molecular layer of SLS's are investigated with the frozen shape approach. The average-bond-energy method for determining valence-band offsets at SLS's are suggestted and tested comprehensively. Based on this method, the valence-band offsets at five SLS's under three strain conditions are determined, their strain-induced effects are discussed. The results of present work show good consistency with available experimental data.

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