Open AccessTHEORETICAL STUDIES ON THE VALENCE-BAND OFFSETS AT STRAINED SEMICONDUCTOR SUPERLATTICES
Author(s) -
Shaolin Ke,
Renzhi Wang,
Huang Mei-Chun
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.103
Subject(s) - superlattice , materials science , valence (chemistry) , valence band , band gap , semiconductor , ab initio , electronic band structure , condensed matter physics , ab initio quantum chemistry methods , electronic structure , semimetal , molecular physics , molecule , physics , optoelectronics , quantum mechanics
Ab initio calculations of electronic structure for strained superlattices (SLS) and nn are carried out, the valence-band maximum Ev and the average bond energy Em in each molecular layer of SLS's are investigated with the frozen shape approach. The average-bond-energy method for determining valence-band offsets at SLS's are suggestted and tested comprehensively. Based on this method, the valence-band offsets at five SLS's under three strain conditions are determined, their strain-induced effects are discussed. The results of present work show good consistency with available experimental data.