Open AccessCONTROLLING Au/n-Si SCHOTTKY BARRIER CONTAI-NING HYDROGEN BY ZERO BIAS ANNEALING AND REVERSE BIAS ANNEALING
Author(s) -
Yuan Min-Hua,
Qiao Yong-Ping,
Song Hai-Zhi,
Jin Si-Xian,
G. G. Qin
Publication year - 1994
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.43.1017
Subject(s) - annealing (glass) , schottky barrier , materials science , hydrogen , wafer , silicon , epitaxy , reverse bias , schottky diode , analytical chemistry (journal) , condensed matter physics , optoelectronics , chemistry , nanotechnology , metallurgy , physics , organic chemistry , layer (electronics) , diode , chromatography
Metal Au was deposited onto oriented phosphorous doped n-type epitaxial silicon. wafers, with or without plasma hydrogen treatment, to form Au/n-Si Schottky barrier (SB). The experimental results indicate: hydrogen decreases the Schottky barrier height (SBH) of Au/n-Si by 0.13eV; the SBH of Schottcky barrier containing hydrogen (SB(H)) can be controlled by zero bias annealing (ZBA) and reverse bias annealing (RBA), i.e. ZBA decreases and RBA increases the SBH of SB(H); and the controlling of SBH is reversible in at least three ZBA/RBA cycles. The increased SBH value of SB(H) after RBA is related not only to the reverse bias used in annealiug but also to the annealing temperature.