RAMAN SCATTERING STUDY OF LO PHONON-PLASMON COUPLED MODE IN HEAVILY CARBON DOPED p-TYPE GaAs | Zendy

Ming Qi | Zendy; Jinsheng Luo | Zendy; J. SHIRAKASHI | Zendy; Shinji Nozaki | Zendy; Kazuhiro Takahashi | Zendy; Eisuke Tokumitsu | Zendy; Makoto Konagai | Zendy

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RAMAN SCATTERING STUDY OF LO PHONON-PLASMON COUPLED MODE IN HEAVILY CARBON DOPED p-TYPE GaAs

Author(s) -

Ming Qi,

Jinsheng Luo,

J. SHIRAKASHI,

Shinji Nozaki,

Kazuhiro Takahashi,

Eisuke Tokumitsu,

Makoto Konagai

Publication year - 1993

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.42.963

Subject(s) - raman scattering , materials science , doping , raman spectroscopy , laser linewidth , phonon , plasmon , x ray raman scattering , scattering , condensed matter physics , molecular physics , optics , optoelectronics , physics , laser

The Raman scattering by LO phonon-plasmon coupled (LOPC) mode in heavily carbon doped p-type GaAs grown by MOMBE has been studied. It was shown by the lineshape analysis based on a theoretical model for the Raman scattering rate that the p-type GaAs has only one LOPC structure in contrast to the two modes in n-type doping case. The influence of heavily doping on the Raman spectroscopy was also discussed based on the experimental results. The linewidth broadening and the red shift of the LOPC mode scattering peak at the ul-trahigh doping level are induced by the crystalline disorder and effects of lattice deformation.

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