Open AccessPHOTOLUMINESCENCE OF Be-DOPED-GaAs QUANTUM WELLS
Author(s) -
Cheng Wen-Qin,
Mei Xiao-Bing,
Jian Zhou,
Yulong Liu,
Zhu Ke
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.864
Subject(s) - photoluminescence , doping , quantum well , materials science , ionization , conduction band , condensed matter physics , ionization energy , optoelectronics , analytical chemistry (journal) , electron , physics , optics , chemistry , ion , laser , quantum mechanics , chromatography
The photoluminescence of Be-doped GaAs quantum wells with width of 10 nm was measured at 4.2 K. The doping concentration is about 1×1017 and 5×1018cm-3. The results showed that the product of the density of states of acceptors and the probability of transition from conduction subband n=l to neutral acceptors at the well center is larger than that near the interface of GaAs and AlGaAs. In addition, the ionization energy of acceptors is decreased as doping concentration is increased. It is due to band-gap narrowing with the doping concentration of p-type GaAs.