Open AccessTHE MUTUAL DIFFUSION AND ABNORMAL RESISTIVITY BEHAVIOUR IN ANNEALED a-Ge/Pb LAYER
Author(s) -
Yuzhi Li,
Xu Cun-Yi,
Guien Zhou,
Hongbao Liu,
Yuheng Zhang
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.832
Subject(s) - annealing (glass) , materials science , electrical resistivity and conductivity , amorphous solid , condensed matter physics , germanium , composite material , crystallography , silicon , metallurgy , chemistry , physics , electrical engineering , engineering
We have studied behaviour of a-Ge/Pb layers after annealing at different temperatures. We obtained: (1) Pb induced amorphous Ge to crystalize. (2) There are two diffusion mecha-nism in the annealing a-Ge/Pb layers. (3) For a-Ge/Pb 200nm/100nm layers, preferred orientation Pb are recrystalllized in annealing. We also explained abnormal behaviour of resistivity during the annealing of layers.