DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE | Zendy

LU LI-WU | Zendy; Zhou Jie | Zendy; Jiben Liang | Zendy; Meiying Kong | Zendy

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DEEP LEVEL STUDIES OF P-HEMT STRUCTURE GROWN BY MBE

Author(s) -

LU LI-WU,

Zhou Jie,

Jiben Liang,

Meiying Kong

Publication year - 1993

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.42.817

Subject(s) - high electron mobility transistor , materials science , optoelectronics , layer (electronics) , spectral line , analytical chemistry (journal) , chemistry , transistor , nanotechnology , electrical engineering , physics , voltage , astronomy , chromatography , engineering

The deep levels of P-HEMT structure grown by MBE have been studied using DLTS technique. DLTS Spectra of samples show that high temperature electron traps, having larger capture cross sections and concentrations, are measured in n-AlGaAs layer of P-HEMT structure. These traps may correlate strongly with oxygen content of n-AIGaAs layer and be responsible for electrical parameters of P-HEMT structure. The experimental results also show that DLTS technique may be a tool of optimisation design of practical devices.

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