Open AccessELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE
Author(s) -
Xing Wei,
Dunwei Gong,
Yang Xiaoping,
Haijun Lu,
Chao Qian,
Sheng Chen,
Xiangjiu Zhang,
Xun Wang,
Wang Qin-Hua,
Fang Lu,
Haibin Sun
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1968
Subject(s) - passivation , boron , materials science , substrate (aquarium) , hydrogen , desorption , molecular beam epitaxy , layer (electronics) , silicon , in situ , analytical chemistry (journal) , epitaxy , adsorption , optoelectronics , nanotechnology , chemistry , organic chemistry , oceanography , geology
A stable hydrogen-terminated Si (100) surface was obtained by using a modified mothed. The Si (100) surface was hydrogen passivated during the ex-situ HF-dip followed by the in-situ low-temperature desorption of physisorbed residues. It was found that this procedure is very effective to eliminate the boron spike at the Si MBE layer/p-Si substrate interface. The origon of the boron spike is also discussed.