ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE | Zendy

WEI Xing | Zendy; Gong Dawei | Zendy; Yang Xiaoping | Zendy; Lü HONG-QIANG | Zendy; Qian Cui | Zendy; SHENG CHI | Zendy; Xiangjiu Zhang | Zendy; Xun Wang | Zendy; WANG QIN-HUA | Zendy; Fang Lü | Zendy; SUN HENG-HUI | Zendy

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ELIMINATION OF INTERFACIAL BORON SPIKES IN Si MOLECULAR BEAM EPITAXY BY HYDROGEN PASSIVATION TREATMENT OF Si (100) SUBSTRATE

Author(s) -

WEI Xing,

Gong Dawei,

Yang Xiaoping,

Lü HONG-QIANG,

Qian Cui,

SHENG CHI,

Xiangjiu Zhang,

Xun Wang,

WANG QIN-HUA,

Fang Lü,

SUN HENG-HUI

Publication year - 1993

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.42.1968

Subject(s) - passivation , boron , materials science , substrate (aquarium) , hydrogen , desorption , molecular beam epitaxy , layer (electronics) , silicon , in situ , analytical chemistry (journal) , epitaxy , adsorption , optoelectronics , nanotechnology , chemistry , organic chemistry , oceanography , geology

A stable hydrogen-terminated Si (100) surface was obtained by using a modified mothed. The Si (100) surface was hydrogen passivated during the ex-situ HF-dip followed by the in-situ low-temperature desorption of physisorbed residues. It was found that this procedure is very effective to eliminate the boron spike at the Si MBE layer/p-Si substrate interface. The origon of the boron spike is also discussed.

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