MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs | Zendy

Ming Qi | Zendy; J. SHIRAKASHI | Zendy; Eisuke Tokumitsu | Zendy; Shinji Nozaki | Zendy; Makoto Konagai | Zendy; Kazuyuki Takahashi | Zendy; Jinsheng Luo | Zendy

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MOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs

Author(s) -

Ming Qi,

J. SHIRAKASHI,

Eisuke Tokumitsu,

Shinji Nozaki,

Makoto Konagai,

Kazuyuki Takahashi,

Jinsheng Luo

Publication year - 1993

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.42.1956

Subject(s) - trimethylgallium , materials science , molecular beam epitaxy , indium , doping , growth rate , carbon fibers , arsenic , epitaxy , optoelectronics , analytical chemistry (journal) , metalorganic vapour phase epitaxy , nanotechnology , chemistry , geometry , mathematics , layer (electronics) , chromatography , composite number , metallurgy , composite material

The growth and electrical properties of carbon doped p-type GaAs and InGaAs grown by metal-organic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic and solid indium as source materials have been studied systematically. The experimental results show that the growth rate and hole concentration of the samples are affected strongly by growth temperature and molecular beam fluxes,especially for InGaAs epilayers. The mechanism of carbon incorporation and its influence on the properties of the samples were also analysed based on the experimental results. It is shown that the changes in growth rate and hole concentration are mainly due to the dependence of TMG decomposition process on the growth condition.

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