Open AccessMOMBE GROWTH OF CARBON DOPED p-TYPE GaAs AND InGaAs
Author(s) -
Ming Qi,
Junichi Shirakashi,
Eisuke Tokumitsu,
Satoshi Nozaki,
Makoto Konagai,
Kazuyuki Takahashi,
Luo Jin-Sheng
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1956
Subject(s) - trimethylgallium , materials science , molecular beam epitaxy , indium , doping , growth rate , carbon fibers , arsenic , epitaxy , optoelectronics , analytical chemistry (journal) , metalorganic vapour phase epitaxy , nanotechnology , chemistry , geometry , mathematics , layer (electronics) , chromatography , composite number , metallurgy , composite material
The growth and electrical properties of carbon doped p-type GaAs and InGaAs grown by metal-organic molecular beam epitaxy (MOMBE) using trimethylgallium (TMG), solid arsenic and solid indium as source materials have been studied systematically. The experimental results show that the growth rate and hole concentration of the samples are affected strongly by growth temperature and molecular beam fluxes,especially for InGaAs epilayers. The mechanism of carbon incorporation and its influence on the properties of the samples were also analysed based on the experimental results. It is shown that the changes in growth rate and hole concentration are mainly due to the dependence of TMG decomposition process on the growth condition.