Open AccessPHOTOREFLECTANCE SPECTRA FROM SURFACES AND GaAs-GaAs INTERFACES OF DOPED MBE GaAs FILMS
Author(s) -
Pan Shi-Hong,
Zhonghe Wang,
Shuo Huang,
Cun-zhou Zhang,
Zhou Xiaochuan,
Xu Gui-Chang,
Jian Jiang,
Chen Zhong-Gui
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1879
Subject(s) - materials science , electric field , doping , optoelectronics , spectral line , laser , spectroscopy , gallium arsenide , penetration depth , optics , physics , quantum mechanics , astronomy
This paper reports the photoreflectance(PR) measurements of electric fields at the surface and the GaAs-GaAs interface of doped MBE GaAs films. By using alternatively He-Ne laser and He-Cd laser as pumping light, PR signals from the surface and the interface of the film can be effectively seperated the different penetration depth of different light. Electric fields at the surface and the interface were deduced from PR spectra. Film interference effects on modulation spectroscopy are studied. The origin of the electric field generated at interfaces are also discussed.