Open AccessSEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM
Author(s) -
刘平,
周祖尧,
林成鲁,
邹世昌,
李炳宗,
孙臻
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1800
Subject(s) - materials science , arsenic , silicon , tin , bimetallic strip , ternary operation , sputtering , annealing (glass) , analytical chemistry (journal) , ion beam , substrate (aquarium) , rutherford backscattering spectrometry , ion , thin film , metallurgy , nanotechnology , metal , chemistry , computer science , programming language , oceanography , organic chemistry , chromatography , geology
The bimetallic layers of Co/Ti were deposited by ion beam sputtering on silicon implanted with arsenic. The sample of Co/Ti/Si was treated by a multi-step annealing under nitrogen ambient. The behaviuor of arsenic during the reaction of ternary Co/Ti/Si system was studied by Rutherford backscattering sepctrometry (RBS). The results show that a multi-layer structure of TiN(O)/Co-Ti-Si/CoSi2/Si was formed by the reaction and a number of arsenic atoms were segregated from silicon substrate to the interlayer of Co-Ti-Si compound.