SEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM | Zendy

LIU PING | Zendy; ZHOU ZU-YAO | Zendy; Chenglu Lin | Zendy; Zou Shichang | Zendy; Bing-Zong Li | Zendy; Zhen Sun | Zendy

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SEGREGATION OF ARSENIC DURING THE SOLID STATE REACTION OF TERNARY Co/Ti/Si SYSTEM

Author(s) -

LIU PING,

ZHOU ZU-YAO,

Chenglu Lin,

Zou Shichang,

Bing-Zong Li,

Zhen Sun

Publication year - 1993

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.42.1800

Subject(s) - materials science , arsenic , silicon , tin , bimetallic strip , ternary operation , sputtering , annealing (glass) , analytical chemistry (journal) , ion beam , substrate (aquarium) , rutherford backscattering spectrometry , ion , thin film , metallurgy , nanotechnology , metal , chemistry , computer science , programming language , oceanography , organic chemistry , chromatography , geology

The bimetallic layers of Co/Ti were deposited by ion beam sputtering on silicon implanted with arsenic. The sample of Co/Ti/Si was treated by a multi-step annealing under nitrogen ambient. The behaviuor of arsenic during the reaction of ternary Co/Ti/Si system was studied by Rutherford backscattering sepctrometry (RBS). The results show that a multi-layer structure of TiN(O)/Co-Ti-Si/CoSi2/Si was formed by the reaction and a number of arsenic atoms were segregated from silicon substrate to the interlayer of Co-Ti-Si compound.

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