Open AccessSTUDY ON GRAIN GROWTH KINETICS OF THIN FILMS BY MEANS OF QUASI-STATE MEASUREMENT OF RESISTIVITY
Author(s) -
Xiaoping Wang,
Zhao Te-Xue,
Hang Ji,
Dahai Yi,
Bo Bian
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1642
Subject(s) - electrical resistivity and conductivity , materials science , grain size , grain growth , thin film , sputtering , activation energy , kinetics , composite material , analytical chemistry (journal) , nanotechnology , chemistry , electrical engineering , physics , quantum mechanics , engineering , chromatography
A method for studying grain growth kinetics of thin films by means of quasi-state measurement of films resistivity is proposed. Pd films is prepared by d c sputtering in ultra-high vacuum, and relationship between resistivity of Pd films and annealling time is measured at different tempertures The change of grain size of Pd films can be calculated by using the two-fluid model and can be compared with results of TEM. It is found that annealling temperature plays an important role in grain growth process and grain growing curve is imitated. The experiment results indicate that grain growth process is thermal activated and the activation energy is about 0. 53eV.