Open AccessPHOTOLUMINESCENCE OF (110) MODULATION-DOPED GaAs-AlGaAs HETEROSTRUCTURES
Author(s) -
程文芹,
刘爽,
周均铭,
刘玉龙,
朱恪
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1529
Subject(s) - photoluminescence , materials science , heterojunction , doping , luminescence , optoelectronics , modulation (music) , carbon fibers , spectral line , recombination , electron , physics , chemistry , biochemistry , quantum mechanics , astronomy , composite number , acoustics , composite material , gene
The photoluminescence spectra of (110) modulation-doped GaAs-AlGaAs het-erostructures grown under high and low carbon background were measured at 4.2K. For high carbon specimen the luminescence peak from the recombination of 2D electrons in channel with holes bound to neutral acceptors was observed, while for low carbon specimen only lines related to bulk GaAs were observed.