Open AccessX-RAY DOUBLE-CRYSTAL DIFFRACTION AND TOPOGRAPHY STUDY OF STRAIN RELAXED InGaAs/GaAs SUPERLATTICES
Author(s) -
Jianhua Li,
Mai Zhang,
Shujuan Cui
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1485
Subject(s) - superlattice , misorientation , materials science , diffraction , condensed matter physics , dislocation , crystal (programming language) , scattering , relaxation (psychology) , substrate (aquarium) , x ray crystallography , optics , crystallography , optoelectronics , physics , microstructure , geology , chemistry , psychology , social psychology , oceanography , computer science , grain boundary , programming language , metallurgy
In this paper, strain relaxed InGaAs/GaAs strained-layer superlattice has been studied by X-ray double-crystal diffraction and topography. By simulating the double-crystal rocking curves using X-ray dynamical scattering theory, important imformation such as the structure, the mechanism and degree of strain relaxation, the misorientation between the superlattice layers and the substrate and misfit dislocation density, and so forth are obtained. The misfit dislocation distribution at the interface between the superlattice layers and the substrate and in the superlattice layers are observed by double-crystal topography.