Open AccessAN IN-SITU STUDY OF ELECTRICAL RESISTIVITY OF MAGNETRON SPUTTERING Mo FILM
Author(s) -
Hang Ji,
Tiansheng Zhao,
Xiaoping Wang,
Yan Dong
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1340
Subject(s) - electrical resistivity and conductivity , materials science , sputter deposition , sputtering , cavity magnetron , condensed matter physics , thin film , physics , nanotechnology , quantum mechanics
In this paper, we report the in-situ study of the dependence of electrical resistivity of magnetron sputtering Mo film on the thickness. We measured the electrical resistivity of Mo film by vacuum measurement. After theoretical computer fitting, we obtained the t heoretical curve of the dependence of resistivity of Mo film on the thickness. We compared the theoretical curve with the experimental curve, the results show that when the thickness is large, there is a very small diversity between the theory of Fuchs-Sordbeimer of resistivity and the present thickness dependence of electrical resistivity. If the effect of grain boundary is considered, the result will agree with the Fuchs-Sordbeimer theory very well in small thickness. We also found that the process of conductance is the thermal electron emission, when the film is not a successive film.