Open AccessVALENCE BAND OFFSET IN PSEUDOMORPHIC Si/Ge0.25Si0.75/Si SINGLE QUANTUM WELL MEASURED BY DEEP LEVEL TRANSIENT SPECTROSCOPY
Author(s) -
Li Xian-Huang,
Lu Fang,
Haibin Sun
Publication year - 1993
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.42.1153
Subject(s) - band bending , deep level transient spectroscopy , materials science , band offset , molecular beam epitaxy , quantum well , valence band , spectroscopy , offset (computer science) , electric field , atomic physics , condensed matter physics , optoelectronics , molecular physics , epitaxy , band gap , physics , silicon , optics , nanotechnology , laser , layer (electronics) , quantum mechanics , computer science , programming language
The band offset between strained GexSi1-x and unstrained Si is mainly due to the valence band offset ΔEv. The thermal emission energy from a quantum well is related to the appropriate band offset. The single quantum well (p type Si/Ge0.25Si0.75/Si) samples were grown by molecular beam epitaxy (MBE), the width of quantum well is 15nm. Deep leve transient spectroscopy (DLTS) measurement have been used to study the valence band offset. After considering the band bending due to the electric field and the first subband energy, the valence band offset ΔEv of the single quantum well was estimated as about 0.19eV, it is in reasonable agreement with theoretical results. The same and difference of emission and capture processess between quantum well and deep level defects were discussed.