Open AccessTOTAL CURRENT SPECTRA STUDIES ON ELECTRONIC STATES OF Si(100) SURFACE
Author(s) -
王向东,
胡际璜,
葛毓青,
戴道宣
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.992
Subject(s) - surface states , valence band , materials science , atomic physics , spectral line , surface (topology) , valence (chemistry) , physics , band gap , optoelectronics , geometry , mathematics , quantum mechanics , astronomy
Electronic states of Si(100)2×1 clean surface and Si(100)1×1-2H surface are studied with total current spectrometer. The occupied surface states are at 0.25, 8.4 and near 12 eV below thevalence band maximum, while the unoccupied surface states are at 0.7 eV above the valence band maximum. Two induced surface states of Si(100)1×1-2H are observed below the valence band maximum.