STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON | Zendy

LI Xiao-lei | Zendy; Fang Lü | Zendy; SUN HENG-HUI | Zendy; HUANG QING-HONG | Zendy

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STUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON

Author(s) -

LI Xiao-lei,

Fang Lü,

SUN HENG-HUI,

HUANG QING-HONG

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.985

Subject(s) - materials science , ion implantation , wafer , silicon , ion , annealing (glass) , crystallographic defect , slip (aerodynamics) , thermal , composite material , crystallography , optoelectronics , chemistry , physics , organic chemistry , meteorology , thermodynamics

Defects charactistics of low-dose p+ implanted silicon after rapid thermal annealing (RTA) was studied. RTA at 600℃ can activate most implanted ions. The defects in samples after RTA below 800℃ are found mainly the ion-implantation induced damage defects. Dislocations are found in samples after RTA above 800℃. The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations. The concentration of defects in 1100℃RTA sample began to increace. Slip dislocations are induced by thermal stress in the wafer.

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