Open AccessSTUDY OF DEFECTS IN LOW-DOSE P+ IMPLANTED AND RAPID THERMAL ANNEALED SILICON
Author(s) -
Xiaolei Li,
Lu Fang,
Haibin Sun,
Huang Qing-Hong
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.985
Subject(s) - materials science , ion implantation , wafer , silicon , ion , annealing (glass) , crystallographic defect , slip (aerodynamics) , thermal , composite material , crystallography , optoelectronics , chemistry , physics , organic chemistry , meteorology , thermodynamics
Defects charactistics of low-dose p+ implanted silicon after rapid thermal annealing (RTA) was studied. RTA at 600℃ can activate most implanted ions. The defects in samples after RTA below 800℃ are found mainly the ion-implantation induced damage defects. Dislocations are found in samples after RTA above 800℃. The ion-implantation damage defects and thermal stress during quenching step are responsible for the formation of dislocations. The concentration of defects in 1100℃RTA sample began to increace. Slip dislocations are induced by thermal stress in the wafer.