Open AccessPHYSICAL MECHANISM OF SYNTHESIZED DIAMOND FILMS ON THE SUBSTRATE OF A STRONG CARBIDE FORMING ELEMENT
Author(s) -
Q.J. Gao,
Lin Zeng-Dong
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.798
Subject(s) - diamond , materials science , substrate (aquarium) , chemical vapor deposition , carbide , silicon carbide , material properties of diamond , composite material , nanotechnology , oceanography , geology
It has been discovered that the physical process of diamond surface metallization is the converse physical process of synthesized diamond film produced by plasma CVD when the substrate is strong carbide forming element and synthesitic temperatures range from 700℃ to 1000℃. We predicted that the physical process of synthesized diamond film should have a structure such as W-WC-diamond film or Si-SiC-diamond film, etc. under this condition.