ATOMIC CORRELATIONS IN AMORPHOUS Si AND Ge AND STRUCTURAL MODEL | Zendy

王德和 | Zendy

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ATOMIC CORRELATIONS IN AMORPHOUS Si AND Ge AND STRUCTURAL MODEL

Author(s) -

王德和

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.792

Subject(s) - amorphous solid , materials science , atom (system on chip) , atomic model , basis (linear algebra) , atomic theory , statistical physics , condensed matter physics , thermodynamics , atomic physics , physics , crystallography , quantum mechanics , computer science , chemistry , mathematics , electron , geometry , embedded system

This paper analyses the atomic correlations in crystalline and amorphous Si and Ge and discusses their relationship. Expressions for the atomic correlations are presented. On the basis of the theory, a 400-atom structural model for a-Ge has been constructed. The main characteristics of the model are in good agreement with experimental results.

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