Open AccessATOMIC CORRELATIONS IN AMORPHOUS Si AND Ge AND STRUCTURAL MODEL
Author(s) -
王德和
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.792
Subject(s) - amorphous solid , materials science , atom (system on chip) , atomic model , basis (linear algebra) , atomic theory , statistical physics , condensed matter physics , thermodynamics , atomic physics , physics , crystallography , quantum mechanics , computer science , chemistry , mathematics , electron , geometry , embedded system
This paper analyses the atomic correlations in crystalline and amorphous Si and Ge and discusses their relationship. Expressions for the atomic correlations are presented. On the basis of the theory, a 400-atom structural model for a-Ge has been constructed. The main characteristics of the model are in good agreement with experimental results.