Open AccessPHOTOELECTRON SPECTROSCOPY STUDIES OF α-P/GaAs (100) INTERFACES
Author(s) -
Xuekun Lu,
X. Y. Hou,
Guangjiong Dong,
Ding Xun-Min
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.689
Subject(s) - overlayer , x ray photoelectron spectroscopy , monolayer , materials science , valence (chemistry) , adsorption , substrate (aquarium) , nanotechnology , chemistry , nuclear magnetic resonance , physics , oceanography , organic chemistry , geology
The room temperature deposited α-P/GaAs(100) interfaces have been studied by XPS, UPS, and LEED. The results show that P is adsorbed as clusters on the surface of GaAs at the initial stage of the interface formation, α-P film is formed as the deposition amount is further increased. The valence structures of the films so obtained are similar to those of plasma deposited α-P:H films. There are about one monolayer of P atoms bonded to Ga atoms of the substrate at the interface, α-P overlayer results in 0.2 eV lowering of GaAs surface barrier.