Open AccessA STUDY ON PROPERTIES OF Au-DOPED SILICON
Author(s) -
Chen Min-Rui,
Shen Yi-Hui,
Shiyi Liu
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.491
Subject(s) - silicon , degeneracy (biology) , materials science , doping , diffusion , semiconductor , spectral line , absorption (acoustics) , carrier lifetime , absorption spectroscopy , molecular physics , analytical chemistry (journal) , atomic physics , optoelectronics , optics , physics , thermodynamics , chemistry , quantum mechanics , bioinformatics , chromatography , composite material , biology
In this paper infra-red absorption spectra and surface photovoltaic spectra of An-doped and undoped silicon are studied. The relation of minority carrier diffusion length to the height of base line of infra-red absorption spectra under the same surface condition is determined. By using semiconductor statistics, we obtain the Au-doped silicon semicondutor statistics formulae when the degeneracy factor is different from unit, as well as silicon two-levels recombination theory formulae when gAu,a≠1 and gAn,d≠ 1 The ratios of the ca-culated lifetime of minority carrier to the experimental data are between 1.64 and 0.745.