X-RAY IRRADIATION EFFECT IN a-Si SOLAR CELL AND ITS BELOW-GAP PHOTOCURRENT SPECTROSCOPY OBSERVATION | Zendy

Wei Guang-Pu | Zendy

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X-RAY IRRADIATION EFFECT IN a-Si SOLAR CELL AND ITS BELOW-GAP PHOTOCURRENT SPECTROSCOPY OBSERVATION

Author(s) -

Wei Guang-Pu

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.485

Subject(s) - photocurrent , irradiation , materials science , spectroscopy , amorphous silicon , solar cell , silicon , amorphous solid , optoelectronics , analytical chemistry (journal) , crystalline silicon , crystallography , physics , chemistry , chromatography , quantum mechanics , nuclear physics

X-ray irradiation effect in hydrogenated amorphous silicon (a-Si:H or a-Si) solar cell has been observed. The results show that the photovoltaic characteristics decrease with the increasing of X-ray irradiation dose at first, and then tend to a steady state. By the below-gap photocurrent spectroscopy measurement, the change of defect density in a-Si induced by X-ray irradiation was studied. The results show that the defect density increase with the X-ray irradiation dose.

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