Open AccessX-RAY IRRADIATION EFFECT IN a-Si SOLAR CELL AND ITS BELOW-GAP PHOTOCURRENT SPECTROSCOPY OBSERVATION
Author(s) -
Guangpu Wei
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.485
Subject(s) - photocurrent , irradiation , materials science , spectroscopy , amorphous silicon , solar cell , silicon , amorphous solid , optoelectronics , analytical chemistry (journal) , crystalline silicon , crystallography , physics , chemistry , chromatography , quantum mechanics , nuclear physics
X-ray irradiation effect in hydrogenated amorphous silicon (a-Si:H or a-Si) solar cell has been observed. The results show that the photovoltaic characteristics decrease with the increasing of X-ray irradiation dose at first, and then tend to a steady state. By the below-gap photocurrent spectroscopy measurement, the change of defect density in a-Si induced by X-ray irradiation was studied. The results show that the defect density increase with the X-ray irradiation dose.