INFLUENCE OF ARGON ADDITION ON THE GROWTH OF DIAMOND-LIKE FILM | Zendy

Kelin Gao | Zendy; Ru-Juan Zhan | Zendy; Weidong Huang | Zendy; ZOU ZU-PING | Zendy; Yanxia Wang | Zendy; Xiang Zhilin | Zendy

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INFLUENCE OF ARGON ADDITION ON THE GROWTH OF DIAMOND-LIKE FILM

Author(s) -

Kelin Gao,

Ru-Juan Zhan,

Weidong Huang,

ZOU ZU-PING,

Yanxia Wang,

Xiang Zhilin

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.465

Subject(s) - argon , chemical vapor deposition , materials science , diamond , langmuir probe , plasma , electron density , electron temperature , deposition (geology) , electron , thin film , carbon film , atomic physics , analytical chemistry (journal) , nanotechnology , plasma diagnostics , chemistry , physics , composite material , paleontology , quantum mechanics , chromatography , sediment , biology

In deposition of the diamond-like films by electron assisted plasma chemical vapor deposition, two systems (CH4/H2 and CH4/H2/Ar) have been used and compared. The electron temperature and electron density have been measured by means of Langmuir single probe. The results show that the electron density in CH4/H2/Ar is higher than that in CH4/H2, and the growth rate of the films increases in CH4/H2/Ar system.

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