Open AccessINFLUENCE OF ARGON ADDITION ON THE GROWTH OF DIAMOND-LIKE FILM
Author(s) -
Gao Kelin,
Reggie Zhan,
Wei Huang,
Zou Zu-Ping,
Yanxia Wang,
Xiang Zhi-Lin
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.465
Subject(s) - argon , chemical vapor deposition , materials science , diamond , langmuir probe , plasma , electron density , electron temperature , deposition (geology) , electron , thin film , carbon film , atomic physics , analytical chemistry (journal) , nanotechnology , plasma diagnostics , chemistry , physics , composite material , paleontology , quantum mechanics , chromatography , sediment , biology
In deposition of the diamond-like films by electron assisted plasma chemical vapor deposition, two systems (CH4/H2 and CH4/H2/Ar) have been used and compared. The electron temperature and electron density have been measured by means of Langmuir single probe. The results show that the electron density in CH4/H2/Ar is higher than that in CH4/H2, and the growth rate of the films increases in CH4/H2/Ar system.