Open AccessINVESTIGATION ON THERMAL STABILITY OF REACTIVE- SPUTTERING a-Si:H/a-Ge:H SUPERLATTICES
Author(s) -
Yinyue Wang,
XU HUAI-ZHE,
Guanghua Chen
Publication year - 1992
Publication title -
acta physica sinica
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.302
Subject(s) - superlattice , materials science , sputtering , thermal stability , crystallization , layer (electronics) , thermal , germanium , thin film , silicon , chemical engineering , thermodynamics , nanotechnology , optoelectronics , physics , engineering
The thermal stability of a-Si:H/a-Ge:H superlattices was studied using LR and XRD spec tra. It was found that the crystallization temperature of superlattices with small layer thickness is higher than that of bulk a-Ge:H. Results are discussed preliminarily.
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