FORMATION OF HOLOGRAPHIC DIFFRACTION GRATINGS ON THE SURFACE OF A n-TYPE Ga As AND MEASURING OF LIGHT EMISSION BY SURFACE PLASMON POLARITON | Zendy

WU DlNG-XIANG | Zendy

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FORMATION OF HOLOGRAPHIC DIFFRACTION GRATINGS ON THE SURFACE OF A n-TYPE Ga As AND MEASURING OF LIGHT EMISSION BY SURFACE PLASMON POLARITON

Author(s) -

WU DlNG-XIANG

Publication year - 1992

Publication title -

acta physica sinica

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.199

H-Index - 47

ISSN - 1000-3290

DOI - 10.7498/aps.41.282

Subject(s) - materials science , holography , polariton , diffraction , optoelectronics , surface plasmon polariton , optics , diffraction grating , surface plasmon , schottky barrier , etching (microfabrication) , schottky diode , diffraction efficiency , plasmon , diode , grating , layer (electronics) , nanotechnology , physics

The method to produce diffraction gratings by H2O2-H2SO4 photo-accelerated etching on the surface of n-GaAs and measuring of light emission by surface pla smon polariton from an Ag/n-GaAs Schottky barrier diode are discussed in this paper.

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