Open AccessMeV PROTON ELASTIC BACKSCATTERING ANALYSIS OF SiNx/Si AND SiOx/Si FILMS
Author(s) -
Zhu Fei-Ran,
Weilin Jiang,
Taoguang Xu,
Yin She
Publication year - 1992
Publication title -
wuli xuebao
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.199
H-Index - 47
ISSN - 1000-3290
DOI - 10.7498/aps.41.2049
Subject(s) - materials science , proton , beam (structure) , rutherford backscattering spectrometry , ion beam analysis , silicon , elastic scattering , atomic physics , optics , nuclear physics , thin film , ion beam , optoelectronics , scattering , physics , nanotechnology
A simple method for the analysis of concentration ratios N/Si and O/Si in SiNx/Si and SiOx/Si is presented. 1.95 MeV H beam elastic backscattering was used to determine the composition and thickness. A comparison with 2.1 MeV He beam Rutherford backscsttering (RBS) is given. It provides a complementary analysis technique. A brief discussion on results is given.